BSR12 データシートの表示（PDF） - NXP Semiconductors.
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BSR12 Datasheet PDF : 12 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
BSR12
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 15 V).
handbook, halfpage
3
3
APPLICATIONS
• High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
1
Top view
1
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER
BSR12
MARKING CODE
B5p
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
ICM
Ptot
Tj
hFE
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
junction temperature
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
open base
−
−
Tamb ≤ 25 °C
−
−
IC = −10 mA; VCE = −1 V
30
IC = −50 mA; VCE = −1 V
30
f = 500 MHz; IC = −50 mA; VCE = −10 V 1.5
ICon = −30 mA; IBon = −3 mA; IBoff = 3mA −
MAX.
−15
−15
−200
250
150
−
120
−
30
UNIT
V
V
mA
mW
°C
GHz
ns
1999 Jul 23
2
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