HMS30C7202N データシートの表示（PDF） - MagnaChip Semiconductor
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HMS30C7202N Datasheet PDF : 179 Pages
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HMS30C7202N
12.5.1.3 WRITE Access Timing
BCLK
RA
nRCS
nRWE
RD
N
tSU(A)
tSU(CE0)
tACC
tLOZ(D)
N+1
N+2
tHO(A)
tREC(WR)
tHIZ(D)
N+3
tHO(CE0)
Symbol
Parameter
Min Max Unit
tSU(A)
Address to nRWE falling-edge setup time
15
tHO(A)
nRWE rising-edge to Address hold time
0
tSU(CE0)
nRCS falling-edge to nRWE falling-edge setup time
15
tHO(CE0)
nRWE rising-edge to nRCS rising-edge setup time
27
tHO(CE1) nROE or nRWE rising-edge to nRCS falling-edge hold time 39
ns
tSU(CE1) nRCS rising-edge to nROE or nRWE falling-edge setup time 25
tREC(WR)
nRWE negate to start of next cycle
26
tHIZ(D)
nRWE rising edge to D Hi-Z delay
25
tACC
write access time
4.5
tLOZ(D)
nRWE falling-edge to D driven
0
Timing values for write access
Memory Configuration Register Setting = 0x068
11 10 9
8
7
6
5
4
3
2
1
0
0
0 0 00
1101
0
00
© 2004 MagnaChip Semiconductor Ltd. All R1ig67hts Reserved.
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Version 1.1
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