MSA-0800-GP4 データシートの表示（PDF） - HP => Agilent Technologies
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MSA-0800-GP4 Datasheet PDF : 4 Pages
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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0800
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
Description
The MSA-0800 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is de-
signed for use as a general purpose
50 Ω gain block above 0.5␣ GHz and
can be used as a high gain transis-
tor below this frequency. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Chip Outline[1]
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS
section, “Chip Use”.
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
MSA
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9595E
6-410
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