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MT47H128M8HW-3M データシートの表示(PDF) - Micron Technology

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MT47H128M8HW-3M
Micron
Micron Technology Micron
MT47H128M8HW-3M Datasheet PDF : 133 Pages
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1Gb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued)
Symbol
DQS, DQS#
LDQS, LDQS#
UDQS, UDQS#
RDQS, RDQS#
VDD
VDDQ
VDDL
VREF
VSS
VSSDL
VSSQ
NC
NF
NU
NU
RFU
Type
I/O
I/O
I/O
Output
Supply
Supply
Supply
Supply
Supply
Supply
Supply
Description
Data strobe: Output with read data, input with write data for source synchronous oper-
ation. Edge-aligned with read data, center-aligned with write data. DQS# is only used
when differential data strobe mode is enabled via the LOAD MODE command.
Data strobe for lower byte: Output with read data, input with write data for source
synchronous operation. Edge-aligned with read data, center-aligned with write data.
LDQS# is only used when differential data strobe mode is enabled via the LOAD MODE
command.
Data strobe for upper byte: Output with read data, input with write data for source
synchronous operation. Edge-aligned with read data, center-aligned with write data.
UDQS# is only used when differential data strobe mode is enabled via the LOAD MODE
command.
Redundant data strobe: For x8 only. RDQS is enabled/disabled via the LOAD MODE
command to the extended mode register (EMR). When RDQS is enabled, RDQS is output
with read data only and is ignored during write data. When RDQS is disabled, ball B3 be-
comes data mask (see DM ball). RDQS# is only used when RDQS is enabled and differen-
tial data strobe mode is enabled.
Power supply: 1.8V ±0.1V.
DQ power supply: 1.8V ±0.1V. Isolated on the device for improved noise immunity.
DLL power supply: 1.8V ±0.1V.
SSTL_18 reference voltage (VDDQ/2).
Ground.
DLL ground: Isolated on the device from VSS and VSSQ.
DQ ground: Isolated on the device for improved noise immunity.
No connect: These balls should be left unconnected.
No function: x8: these balls are used as DQ[7:4]; x4: they are no function.
Not used: For x16 only. If EMR(E10) = 0, A8 and E8 are UDQS# and LDQS#. If EMR(E10) =
1, then A8 and E8 are not used.
Not used: For x8 only. If EMR(E10) = 0, A2 and E8 are RDQS# and DQS#. If EMR(E10) = 1,
then A2 and E8 are not used.
Reserved for future use: Row address bits A13 (x16 only), A14, and A15.
PDF: 09005aef8565148a
1GbDDR2.pdf – Rev. AA 07/14 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.

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