FDD3510H データシートの表示（PDF） - Fairchild Semiconductor
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FDD3510H Datasheet PDF : 10 Pages
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FDD3510H
April 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
Q2: P-Channel
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
100% UIL Tested
RoHS Compliant
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
D1/D2
D1
D2
G2
S2
G1
S1
Dual DPAK 4L
G1
G2
S1
N-Channel
S2
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Continuous
- Pulsed
Power Dissipation for Single Operation
EAS
TJ, TSTG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
TC = 25°C
TA = 25°C
TC = 25°C (Note 1)
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
(Note 3)
Q1
Q2
80
-80
±20
±20
13.9
-9.4
4.3
-2.8
20
-10
35
32
3.1
1.3
37
54
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
3.5
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
3.9
Package Marking and Ordering Information
°C/W
Device Marking
FDD3510H
Device
FDD3510H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDD3510H Rev.C
www.fairchildsemi.com
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