FDD3510H データシートの表示（PDF） - Fairchild Semiconductor
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FDD3510H Datasheet PDF : 10 Pages
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Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted
10
VGS = -10V
8
6
VGS = -4.5V
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4
VGS = -3V
2
VGS = -2.5V
0
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
2.5
VGS = -2.5V
2.0
VGS = -3V
VGS = -3.5V
1.5
1.0
0.5
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2
4
6
-ID, DRAIN CURRENT(A)
VGS = -4.5V
VGS = -10V
8
10
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
2.0
1.8 ID = -2.8A
VGS = -10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On-Resistance
vs Junction Temperature
600
ID = -2.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
500
400
TJ = 125oC
300
200
TJ = 25oC
100
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
8
VDS = -5V
6
4
TJ = 150oC
2
TJ = 25oC
TJ = -55oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
FDD3510H Rev.C
7
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