FDD3510H データシートの表示（PDF） - Fairchild Semiconductor
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FDD3510H Datasheet PDF : 10 Pages
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Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
10
ID = -2.8A
8
6
VDD = -40V
VDD = -30V
4
VDD = -50V
1000
100
Ciss
Coss
2
0
0 2 4 6 8 10 12 14 16
Qg, GATE CHARGE(nC)
Figure 21. Gate Charge Characteristics
4
f = 1MHz
VGS = 0V
Crss
10
0.1
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
10
3
8
VGS = -10V
TJ = 25oC
6
2
VGS = -4.5V
4
TJ = 125oC
1
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
Figure 23. Unclamped Inductive
Switching Capability
2
RθJC = 3.9oC/W
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 24. Maximum Continuous Drain
Current vs Case Temperature
20
10
100us
1 THIS AREA IS
LIMITED BY rds(on)
0.1
0.05
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.9oC/W
TC = 25oC
10
1ms
10ms
100ms
DC
100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
20000
10000
VGS = -10V
1000
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2SR5IθNJCG=LEX-3---.-1-P9---–2-oU--5-CT-L---x/-S-WE
TX = 25oC
10
10-6
10-5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
Figure 26. Single Pulse Maximum Power
Dissipation
FDD3510H Rev.C
8
www.fairchildsemi.com
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