2SC4541 データシートの表示（PDF） - Toshiba

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2SC4541

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

2SC4541

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCB = 80 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

VCE = 2 V, IC = 100 mA

VCE = 2 V, IC = 2 A

IC = 1.5 A, IB = 75 mA

IC = 1.5 A, IB = 75 mA

VCE = 2 V, IC = 100 mA

VCB = 10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

0.1

µA

―

―

0.1

µA

50

―

―

V

120 ― 400

40

―

―

―

―

0.5

V

―

―

1.2

V

― 100 ― MHz

―

20

―

pF

Turn-on time

Switching time

Storage time

Fall time

ton

OUTPUT ―

0.1

―

20 µs INPUT IB1

tstg

IB1

IB2

30 V

IB2

IB1 = −IB2 = 75 mA,

tf

DUTY CYCLE ≤ 1%

―

0.5

―

µs

―

0.1

―

Marking

Part No. (or abbreviation code)

KD

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2004-07-07

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