2SC5713 データシートの表示（PDF） - Toshiba

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2SC5713

Silicon NPN Epitaxial Type Transistor

Toshiba 

2SC5713

Transient Thermal Resistance rth – tw

1000

100

10

1

0.001

0.01

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm2)

0.1

1

10

100

1000

Pulse width tw (s)

Safe Operating Area

10 IC max (pulsed) ♦

IC max (continuous)

1

100 μs♦

1 ms♦

10 ms♦

100 ms♦*

10 s♦*

DC operation *

(Ta = 25°C)

♦: Single nonrepetitive pulse

Ta = 25°C

Note that the curves for

0.1 100 ms*, 10 s* and DC

operation* will be different when

the devices aren’t mounted on

an FR4 board (glass epoxy,

1.6 mm thick, Cu area:

645 mm2). These characteristic

curves must be derated linearly

with increase in temperature.

0.01

0.1

1

10

100

Collector-emitter voltage VCE (V)

4

2006-11-10

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