BF997 データシートの表示（PDF） - Philips Electronics
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BF997 Datasheet PDF : 5 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF997
FEATURES
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source
• Integrated drain resistance to suppress oscillation in the
frequency range greater than 1 GHz.
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
• UHF and VHF applications such as:
– UHF/VHF television tuners
– Professional communication equipment
• Especially intended for use in pre-amplifiers in CATV
tuners with a large tuning range up to 500 MHz.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
handbook, halfpage
4
3
d
g2
g1
1
2
s,b
Top view
MAM039
Marking code: MKp.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
VDS
ID
Ptot
Tj
Yfs
Cig1-s
Crs
F
drain-source voltage
−
drain current
−
total power dissipation
up to Tamb = 60 °C
−
junction temperature
−
transfer admittance
f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 18
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2.5
feedback capacitance
f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 25
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt;
1
ID = 10 mA; VDS = 15 V; VG2-S = 4 V
MAX.
20
30
200
150
−
−
−
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
April 1991
2
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