2SK3511-S データシートの表示（PDF） - NEC => Renesas Technology
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2SK3511-S Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
2SK3511-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±83
A
ID(pulse)
±260
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
(TO-262)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch
150
°C
Tstg
–55 to +150 °C
IAS
52
A
EAS
250
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15617EJ1V0DS00 (1st edition)
©
Date Published May 2002 NS CP(K)
Printed in Japan
2001
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