APM4538K データシートの表示（PDF） - Anpec Electronics

部品番号

コンポーネント説明

メーカー

APM4538K

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4538K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

TJ

TSTG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

VGS=±10V

PD* Power Dissipation

TA=25°C

TA=100°C

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

N Channel P Channel

36

-36

±16

±16

5

-4

20

-16

1.7

-1.7

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

Static Characteristics

BVDSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a

Drain-Source On-State

Resistance

VGS=0V, IDS=250µA

VGS=0V, IDS=-250µA

VDS=30V, VGS=0V

TJ=85°C

VDS=-30V, VGS=0V

TJ=85°C

VDS=VGS, IDS=250µA

VDS=VGS, IDS=-250µA

VGS=±16V, VDS=0V

VGS=10V, IDS=5A

VGS=-10V, IDS=-4A

VGS=4.5V, IDS=4A

VGS=-4.5V, IDS=-3A

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

APM4538K

Unit

Min. Typ. Max.

36

V

-36

1

30

µA

-1

-30

0.7 1.1 1.5

V

-1 -1.5 -2

±100

±100 nA

50 65

60 80

mΩ

60 80

80 100

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

Share Link: