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ATF-541M4 データシートの表示(PDF) - HP => Agilent Technologies

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ATF-541M4 Datasheet PDF : 16 Pages
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ATF-541M4 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
θjc
Parameter
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage [2]
Drain Current[2]
Gate Current[5]
Total Power Dissipation [3]
RF Input Power[5]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
-5 to 1
120
2
360
13
150
-65 to 150
212
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
4.7 mW/°C for TL > 74°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. The device can handle +13 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
applications section for additional information.
120
0.7 V
100
0.6 V
80
60
0.5 V
40
20
0
0 12 3 45
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
0.4 V
0.3 V
67
Product Consistency Distribution Charts [6, 7]
320
240
-3 Std
160
320
Cpk = 0.85
Stdev = 1.14
240
300
Cpk = 1.16
Stdev = 0.30
250
200
-3 Std
+3 Std
160
150
Cpk = 1.72
Stdev = 0.072
+3 Std
100
80
80
50
0
29
32
35
38
41
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 35.82
0
15
16
17
18
19
20
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
LSL = 15.5, Nominal = 17.5, USL = 18.5
0
0.3
0.5
0.7
0.9
1.1
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
Nominal = 0.5, USL = 0.9
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
2

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