BC846BDW1(2016) データシートの表示（PDF） - ON Semiconductor

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BC846BDW1
(Rev.:2016)

NPN Duals Dual General Purpose Transistors

ON Semiconductor 

BC846BDW1, BC847BDW1, BC848CDW1

TYPICAL CHARACTERISTICS − BC846BDW1

600

500

150°C

400

VCE = 5 V

300

25°C

200

−55°C

100

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain at VCE = 5 V

600

500

150°C

400

300

25°C

VCE = 10 V

200

−55°C

100

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 2. DC Current Gain at VCE = 10 V

0.25

IC/IB = 10

0.20

0.15

0.10

0.05

25°C

150°C

−55°C

0.3

0.25

IC/IB = 20

0.2

0.15

0.1

0.05

25°C

150°C

−55°C

0.00

0

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 3. VCE(sat) at IC/IB = 10

IC, COLLECTOR CURRENT (A)

Figure 4. VCE(sat) at IC/IB = 20

1.10

1.00

0.90

IC/IB = 10

−55°C

0.80

25°C

0.70

0.60

150°C

0.50

0.40

0.30

0.20

0.0001

0.001

0.01

IC, COLLECTOR CURRENT (A)

Figure 5. VBE(sat) at IC/IB = 10

1.10

1.00

IC/IB = 20

0.90

−55°C

0.80

0.70

25°C

0.60

0.50

150°C

0.40

0.30

0.20

0.1

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 6. VBE(sat) at IC/IB = 20

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