BC856BDW1T1G データシートの表示（PDF） - ON Semiconductor
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BC856BDW1T1G Datasheet PDF : 6 Pages
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BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856
VCE = -5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.6
IC =
-1.2 -10 mA
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0 -10 -20
Figure 3. Collector Saturation Region
-1.0
-1.4
-1.8
qVB for VBE
-2.2
-55°C to 125°C
-2.6
-3.0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
40
TJ = 25°C
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
500 VCE = -5.0 V
200
100
50
20
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
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