BF421L データシートの表示（PDF） - Philips Electronics
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BF421L Datasheet PDF : 6 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
BF421L; BF423L
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
MIN.
VCB = −200 V; IE = 0 A
−
VCB = −200 V; IE = 0 A; Tj = 150 °C
−
VEB = −5 V; IC = 0 A
−
VCE = −20 V; IC = −25 mA
50
IC = −30 mA; IB = −5 mA; note 1
−
VCE = −30 V; IC = ic = 0 A; f = 1 MHz −
VCE = −10 V; IC = −10 mA; f = 100 MHz 60
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−10
−10
−10
−
−600
1.6
−
UNIT
nA
µA
µA
mV
pF
MHz
2004 Nov 10
3
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