BF1215 データシートの表示（PDF） - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data for amplifier A and B
Symbol Parameter
Conditions
Min Typ Max
VDS
ID
Ptot
|yfs|
Ciss(G1)
Crss
NF
Xmod
Tj
drain-source voltage
DC
--6
drain current
DC
- - 30
total power dissipation
forward transfer admittance
input capacitance at gate1
Tsp ≤ 107 °C
f = 100 MHz; Tj = 25 °C;
ID = 19 mA
f = 100 MHz
[1] -
23
[2] -
- 180
27 38
2.5 -
reverse transfer capacitance f = 100 MHz
[2] -
27 -
noise figure
f = 400 MHz; YS = YS(opt)
- 1.5 -
cross modulation
f = 800 MHz; YS = YS(opt)
- 1.9 -
input level for k = 1 % at [3] 105 107 -
40 dB AGC; fw = 50 MHz;
funw = 60 MHz
junction temperature
- - 150
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 32 and Figure 33 test circuits.
Unit
V
mA
mW
mS
pF
fF
dB
dB
dBμV
°C
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (amplifier A)
gate2
gate1 (amplifier B)
drain (amplifier B)
source
drain (amplifier A)
Simplified outline Graphic symbol
654
AMP a
G1
D
(A)
(A)
123
G2
S
G1
D
(B)
(B)
AMP b
sym033
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BF1215
-
plastic surface-mounted package; 6 leads
Version
SOT363
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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