BF1215 データシートの表示（PDF） - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ
Unit
240
K/W
Table 7. Static characteristics
Tj = 25 °C.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 μA
amplifier A
amplifier B
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 μA
VDS = 5 V; VG1-S = 5 V; ID = 100 μA
VG2-S = 4 V; VDS(B) = 5 V; RG1 = 39 kΩ
amplifier A: VDS(A) = 5 V
amplifier B
VG2-S = 0 V; VDS(A) = VDS(B) = 0 V
amplifier A: VG1-S(A) = 5 V
amplifier B: VG1-S(B) = 5 V
VG2-S = 4 V; VDS(A) = VDS(B) = 0 V;
VG1-S(A) = VG1-S(B) = 0 V
[1] RG1 connects gate1 amplifier B to VGG = 0 V, see Figure 2.
[2] RG1 connects gate1 amplifier B to VGG = 5 V, see Figure 2.
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-
V
-
V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] -
-
19.5 mA
[2] -
-
23 mA
- - 50 nA
- - 50 nA
- - 20 nA
BF1215_1
Product data sheet
G1 (A)
G2
G1 (B)
RG1
VGG
Fig 2.
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Functional diagram
D (A)
S
D (B)
001aaa553
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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