BF1215 データシートの表示（PDF） - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
Table 8. Dynamic characteristics for amplifier A and B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance f = 100 MHz; Tj = 25 °C
input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance
f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
cross modulation
amplifier A: BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
amplifier B: BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1] Calculated from S-parameters.
[2] Measured in Figure 32 and Figure 33 test circuits.
Min Typ Max Unit
23 27 38 mS
[1] -
2.5 -
pF
[1] -
2.5 -
pF
[1] -
0.8 -
pF
[1] -
27 -
fF
[1]
30 34 38 dB
26 30 34 dB
22 26 30 dB
[1]
30 34 38 dB
26 31 34 dB
22 26 30 dB
-
-
6
dB
-
1.5 -
dB
-
1.9 -
dB
[2]
95 104 -
-
100 -
-
104 -
105 107 -
dBμV
dBμV
dBμV
dBμV
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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