BF485PN データシートの表示（PDF） - Philips Electronics
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BF485PN Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN/PNP high voltage transistors
Product specification
BF485PN
handbo−o2k,0h0alfpa(6g)e (5) (4) (3) (2)
(1)
IC
(mA)
−150
(7)
(8)
(9)
−100
(10)
− 50
MLD397
0
0
−2
−4
−6
TR2 (PNP).
(1) IB = −50 mA.
(2) IB = −45 mA.
(3) IB = −40 mA.
(4) IB = −35 mA.
(5) IB = −30 mA.
(6) IB = −25 mA.
(7) IB = −20 mA.
−8
−10
VCE (V)
(8) IB = −15 mA.
(9) IB = −10 mA.
(10) IB = −5 mA.
Fig.8 Collector current as a function of
collector-emitter voltage; typical values.
handb−o1o0k,0h0alfpage
VBE
(mV)
− 800
− 600
− 400
MLD398
(1)
(2)
(3)
− 200
0
−10−1
−1
TR2 (PNP); VCE = −10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
IC (mA)
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
handb−o1o0k,0h0alfpage
VBEsat
(mV)
(1)
− 800
(2)
− 600
(3)
− 400
MLD399
− 200
−10−1
−1
TR2 (PNP); IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
IC (mA)
Fig.10 Base-emitter saturation voltage as a
function of collector current.
2000 Aug 02
−103
handbook, halfpage
VCEsat
(mV)
(1)
−102
(2)
(3)
MLD400
−1−010−1
−1
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
IC (mA)
Fig.11 Collector-emitter saturation voltage as a
function of collector current: typical values.
5
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