APM4532(2003) データシートの表示（PDF） - Anpec Electronics

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APM4532
(Rev.:2003)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4532

Typical Characteristics

N-Channel

Output Characteristics

20

VGS=5,6,7,8,9,10V

15

VGS=4V

10

5

VGS=3V

0

0

1

2

3

4

5

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

20.0

17.5

15.0

12.5

10.0

7.5

TJ=125°C

5.0

TJ=-55°C

2.5

TJ=25°C

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

IDS=250uA

1.25

1.00

0.75

0.50

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

On-Resistance vs. Drain Current

0.10

0.09

0.08

VGS=4.5V

0.07

0.06

0.05

0.04

VGS=10V

0.03

0.02

0.01

0.00

0 2 4 6 8 10 12 14 16 18 20

ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.

4

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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