CXK58512M データシートの表示（PDF） - Sony Semiconductor
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CXK58512M Datasheet PDF : 12 Pages
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CXK58512TM/M -55LL∗/70LL/10LL
65536-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact t∗hUendesradeleveslopomfefnitce.
Description
The CXK58512TM/M is a high speed CMOS static
RAM organized as 65536-words by 8 bits.
CXK58512TM
32 pin TSOP (Plastic)
CXK58512M
32 pin SOP (Plastic)
A polysilicon TFT cell technology realized extremely
low stand-by current and higher data retention
stability.
Special feature are low power consumption, high
speed.
The CXK58512TM/M is a suitable RAM for portable
equipment with battery back up.
Block Diagram
Features
A15
• Fast access time
(Access time)
A13
A8
-55LL
55ns (Max.)
A11
A9
-70LL
70ns (Max.)
A7
-10LL
100ns (Max.)
A6
A5
• Low standby current
10µA (Max.)
A14
• Low data retention current
6µA (Max.)
A12
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
A4
A3
• Broad package line-up
A10
CXK58512TM 8mm × 20mm 32 pin TSOP package
A0
A2
CXK58512M 525mil 32 pin SOP Package
A1
Buffer
Row
Decoder
Memory
Matrix
1024 × 512
VCC
GND
Buffer
I/O Gate
Column
Decoder
Function
65536-word × 8 bit static RAM
Structure
Silicon gate CMOS IC
OE
WE
CE1
CE2
Buffer
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94915A58-PK
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