M59MR032C データシートの表示（PDF） - STMicroelectronics

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M59MR032C

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M59MR032C, M59MR032D

Figure 4. Read Operation Sequence when CR15 = 0 (excluding Read Memory Array)

K

L

A16-A20

ADQ0-ADQ15

ADQ0-ADQ15

ADQ0-ADQ15

VALID ADDRESS

CONF. CODE 2

VALID ADDRESS

VALID DATA NOT VALID

CONFIGURATION CODE 3

VALID ADDRESS

VALID DATA

CONFIGURATION CODE 6

VALID ADDRESS

NOT VALID

NOT VALID

VALID DATA

AI90112

Burst Read. The device also supports a burst

read. In this mode, an address is first latched on

the rising edge of L or K (or falling edge of K, ac-

cording to configuration settings); after a config-

urable delay of 2 to 6 clock cycles a new data is

output at each clock cycle. The burst sequence

may be configured for linear or interleaved order

and for a length of 4, 8 words or for continuous

burst mode.

A WAIT signal may be asserted to indicate to the

system that an output delay will occur.

This delay will depend on the starting address of

the burst sequence; the worst case delay will oc-

cur when the sequence is crossing a 32 word

boundary and the starting address was at the end

of a four word boundary. See the Write Configura-

tion Register (CR) Instruction for more details on

all the possible settings for the synchronous burst

read.

Write. Write operations are used to give Instruc-

tion Commands to the memory or to latch Input

Data to be programmed. A write operation is initi-

ated when Chip Enable E and Write Enable W are

at VIL with Output Enable G at VIH. Addresses are

latched on the rising edge of L. Commands and In-

put Data are latched on the rising edge of W or E

whichever occurs first. Noise pulses of less than

5ns typical on E, W and G signals do not start a

write cycle. Write operations are asynchronous

and clock is ignored during write.

Dual Bank Operations. The Dual Bank allows to

read data from one bank of memory while a pro-

gram or erase operation is in progress in the other

bank of the memory. Read and Write cycles can

be initiated for simultaneous operations in different

banks without any delay. Status Register during

Program or Erase must be monitored using an ad-

dress within the bank being modified.

Output Disable. The data outputs are high im-

pedance when the Output Enable G is at VIH with

Write Enable W at VIH.

Standby. The memory is in standby when Chip

Enable E is at VIH and the P/E.C. is idle. The pow-

er consumption is reduced to the standby level

and the outputs are high impedance, independent

of the Output Enable G or Write Enable W inputs.

Automatic Standby. When in Read mode, after

150ns of bus inactivity and when CMOS levels are

driving the addresses, the chip automatically en-

ters a pseudo-standby mode where consumption

is reduced to the CMOS standby value, while out-

puts still drive the bus. The automatic standby fea-

ture is not available when the device is configured

for synchronous burst mode.

Power-down. The memory is in Power-down

when the Configuration Register is set for Power-

down and RP is at VIL. The power consumption is

reduced to the Power-down level, and Outputs are

in high impedance, independent of the Chip En-

able E, Output Enable G or Write Enable W inputs.

Block Locking. Any combination of blocks can

be temporarily protected against Program or

Erase by setting the lock register and pulling WP

to VIL (see Block Lock instruction).

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