FDD6635 データシートの表示（PDF） - Fairchild Semiconductor
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FDD6635 Datasheet PDF : 8 Pages
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February 2007
FDD6635
tm
35V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• 59 A, 35 V
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Fast Switching
• RoHS compliant
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VDS(Avalanche)
VGSS
ID
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Ratings
35
40
±20
59
15
100
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
(Note 5)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
113
55
3.8
1.6
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.7
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
FDD6635
FDD6635
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
mJ
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
www.fairchildsemi.com
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