FDD6635 データシートの表示（PDF） - Fairchild Semiconductor
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FDD6635 Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics(Note 2)
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 28 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
35
V
32
mV/°C
1
μA
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
ID = 250 μA, Referenced to 25°C
1 1.9
–5
3
V
mV/°C
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VDS = 5 V,
ID = 15 A
ID = 13 A
ID = 15 A, TJ=125°C
ID = 15 A
8.2 10
mΩ
10.2 13
12.4 16
53
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
1400
pF
317
pF
137
pF
1.4
Ω
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg (TOT)
Total Gate Charge, VGS = 10V
Qg
Total Gate Charge, VGS = 5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 20 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 20 V, ID = 15 A
11 20
ns
6
12
ns
28 45
ns
14 25
ns
26 36
nC
13 18
nC
3.9
nC
5.3
nC
FDD6635 Rev. C2(W)
www.fairchildsemi.com
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