IRHNA7264SE データシートの表示（PDF） - International Rectifier
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IRHNA7264SE Datasheet PDF : 4 Pages
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Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a stan-
dard gate voltage of 12 volts per note 6 and a VDSS
bias condition equal to 80% of the device rated volt-
age per note 7. Pre- and post-radiation limits of the de-
vices irradiated to 1 x 105 Rads (Si) are identical and
are presented in Table 1. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105 Rads
(Si), no change in limits are specified in DC param-
eters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 1012 Rads (Si)/
Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHNA7264SE
100K Rads (Si)
min. max.
250
—
2.0
4.5
—
100
—
-100
—
50
—
0.110
—
1.4
Units
V
nA
µA
Ω
V
Test Conditions
VGS = 0V, ID = 1.0 mA
VGS = VDS, ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID =21A
TC = 25oC, IS = 34A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 200 — — 200 V Applied drain-to-source voltage
during gamma-dot
— 10 — — 10 — A Peak radiation induced photo-current
— 16 — — 2.3 — A/µsec Rate of rise of photo-current
— 1 — — 20 — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter Typ.
BVDSS
250
Units
V
Ion
LET (Si)
Fluence Range
(MeV/mg/cm2) (ions/cm2) (µm)
VDS Bias
(V)
VGS Bias
(V)
Ni
28
1 x 105
~35
200
-5
To Order
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