M295V400B-120M1R データシートの表示（PDF） - STMicroelectronics
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M295V400B-120M1R
STMicroelectronics
M295V400B-120M1R Datasheet PDF : 34 Pages
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M29F400T, M29F400B
Table 14B. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F400T / M29F400B
Symbol Alt
Parameter
Test
Condition
-90
Standard
Interface
-120
Standard
Interface
Min Max Min Max
tAVAV
tRC Address Valid to Next Address Valid
tAVQV
tELQX (1)
tELQV (2)
tGLQX (1)
tGLQV (2)
tEHQX
tEHQZ (1)
tACC Address Valid to Output Valid
tLZ Chip Enable Low to Output Transition
tCE Chip Enable Low to Output Valid
tOLZ Output Enable Low to Output Transition
tOE Output Enable Low to Output Valid
tOH Chip Enable High to Output Transition
tHZ Chip Enable High to Output Hi-Z
E = VIL,
G = VIL
E = VIL,
G = VIL
G = VIL
G = VIL
E = VIL
E = VIL
G = VIL
G = VIL
90
120
90
120
0
0
90
120
0
0
35
50
0
0
20
30
tGHQX
tGHQZ (1)
tOH Output Enable High to Output Transition
tDF Output Enable High to Output Hi-Z
E = VIL
E = VIL
0
0
20
30
tAXQX
tOH Address Transition to Output Transition
E = VIL,
G = VIL
0
0
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
tPHEL
tRH RP High to Chip Enable Low
50
50
tPLPX
tRP RP Pulse Width
500
500
tELBL
tELBH
tBLQZ
tELFL
tELFH
tFLQZ
Chip Enable to BYTE Switching Low or
High
BYTE Switching Low to Output
High Z
5
5
20
30
tBHQV
tFHQV
BYTE Switching High to Output
Valid
40
40
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
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