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M295V400B-120M1R データシートの表示(PDF) - STMicroelectronics

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M295V400B-120M1R Datasheet PDF : 34 Pages
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M29F400T, M29F400B
Table 15B. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F400T / M29F400B
Symbol Alt
Parameter
-90
Standard
Interface
-120
Standard
Interface
Min
Max
Min
Max
tAVAV
tWC Address Valid to Next Address Valid
90
120
tELWL
tCS Chip Enable Low to Write Enable Low
0
0
tWLWH
tWP Write Enable Low to Write Enable High
45
50
tDVWH
tDS Input Valid to Write Enable High
45
50
tWHDX
tDH Write Enable High to Input Transition
0
0
tWHEH
tCH Write Enable High to Chip Enable High
0
0
tWHWL
tWPH Write Enable High to Write Enable Low
20
20
tAVWL
tAS Address Valid to Write Enable Low
0
0
tWLAX
tAH Write Enable Low to Address Transition
45
50
tGHWL
Output Enable High to Write Enable Low
0
0
tVCHEL
tVCS VCC High to Chip Enable Low
50
50
tWHGL
tOEH Write Enable High to Output Enable Low
0
0
tPHPHH (1,2) tVIDR RP Rise Time to VID
500
500
tPLPX
tWHRL (1)
tPHWL (1)
tRP RP Pulse Width
tBUSY Program Erase Valid to RB Delay
tRSP RP High to Write Enable Low
500
500
35
50
4
4
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
a block not being erased returns valid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It will result in both DQ2 and DQ6 toggling
when the data is being programmed. ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
Erase Resume (ER) Instruction. If an Erase
Suspend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.
19/34

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