M29W008EB データシートの表示（PDF） - STMicroelectronics

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M29W008EB

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W008ET, M29W008EB

4 Command interface

Table 4. Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ(1)(2)

Max(2)

Unit

Chip Erase

Block Erase (64 KBytes)

Erase Suspend Latency Time

Program (Byte)

Chip Program (Byte by Byte)

Program/Erase Cycles (per Block)

Data Retention

12

60(3)

s

0.8

6(4)

s

15

25(3)

µs

10

200(3)

µs

12

60(3)

s

100,000

cycles

20

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

19/43

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