M36P0R8070E0 データシートの表示（PDF） - Numonyx -> Micron

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M36P0R8070E0

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Numonyx -> Micron 

DC and AC parameters

5

DC and AC parameters

M36P0R8070E0

This section summarizes the operating measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics tables in this

section are derived from tests performed under the measurement conditions summarized in

Table 4., Operating and AC measurement conditions. Designers should check that the

operating conditions in their circuit match the operating conditions when relying on the

quoted parameters.

Table 4.

Operating and AC measurement conditions

Parameter

Flash memory

Min

Max

VDDF supply voltage

VCCP supply voltage

VDDQ supply voltage

VPPF supply voltage (factory environment)

VPPF supply voltage (application environment)

Load capacitance (CL)

Output circuit resistors (R1, R2)

Input rise and fall times

Input pulse voltages

Input and output timing ref. voltages

1. Referenced to VSS.

2. VCCP = VDDQ.

Figure 4. AC measurement I/O waveform

1.7

1.95

–

–

1.7

1.95

8.5

9.5

–0.4 VDDQ +0.4

30

16.7

3

0 to VDDQ

VDDQ/2

PSRAM

Unit

Min

Max

–

–

V

1.7

1.95 V

1.7

1.95 V

–

–

V

–

–

V

30

pF

16.7

kΩ

1(1), (2) ns

0 to VDDQ

V

VDDQ/2

V

VDDQ

0V

VDDQ/2

AI06161

16/22

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