M36P0R8070E0 データシートの表示（PDF） - Numonyx -> Micron

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M36P0R8070E0

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Numonyx -> Micron 

Part numbering

7

Part numbering

M36P0R8070E0

Note:

20/22

Table 7. Ordering information scheme

Example:

M36 P 0 R 8 0 7 0 E 0 ZAC E

Device type

M36 = multichip package (Flash + PSRAM)

Flash 1 architecture

P = Multilevel, multiple bank, large buffer

Flash 2 architecture

0 = no die

Operating voltage

R = VDDF = VCCP = VDDQ = 1.7 to 1.95 V

Flash 1 density

8 = 256 Mbits

Flash 2 density

0 = no die

RAM 1 density

7 = 128 Mbits

RAM 0 density

0 = no Die

Parameter blocks location

E = even block flash memory configuration

Product version

0 = 90 nm Flash technology, 93 ns speed; 0.11 µm PSRAM technology, 70 ns speed

Package

ZAC = stacked TFBGA107 C stacked footprint.

Option

E = ECOPACK package, standard packing

F = ECOPACK package, tape and reel packing

Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of

available options (speed, package, etc.) or for further information on any aspect of this

device, please contact the Numonyx sales office nearest to you.

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