M58BV016DB7T3F データシートの表示（PDF） - Micron Technology

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メーカー

M58BV016DB7T3F

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Micron Technology 

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Command interface

Table 10. Program, erase times and program, erase endurance cycles(1)

M58BW016

Parameters

Typ

Max

Unit

Min

VPP = VDD VPP = 12 V VPP = VDD VPP = 12 V

Parameter Block (64 Kbits)

Program

0.030

0.016

0.060

0.032

s

Main Block (512 Kbits)

Program

0.23

0.13

0.46

0.26

s

Parameter Block Erase

0.8

0.64

1.8

1.5

s

Main Block Erase

1.5

0.9

3

1.8

s

Program Suspend Latency

time

3

10

µs

Erase Suspend Latency time

10

30

µs

Program/Erase cycles (per

block)

100,000

cycles

1. TA = –40 to 125 °C, VDD = 2.7 V to 3.6 V, VDDQ = 2.4 V to VDD.

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