M58BV016DB7T3F データシートの表示（PDF） - Micron Technology

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M58BV016DB7T3F

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Micron Technology 

DC and AC parameters

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

7

DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics tables that

follow, are derived from tests performed under the measurement conditions summarized in

Table 13: Operating and AC measurement conditions. Designers should check that the

operating conditions in their circuit match the measurement conditions when relying on the

quoted parameters.

Table 13.

Operating and AC measurement conditions

Parameter

Value

Min

Max

Supply voltage (VDD)

Input/output supply voltage (VDDQ)

Ambient temperature (TA)

Load capacitance (CL)

Clock rise and fall times

Input rise and fall times

Input pulses voltages

Input and output timing ref. voltages

Grade 6

Grade 3

2.7

3.6

2.4

VDD

–40

90

–40

125

30

4

4

0 to VDDQ

VDDQ/2

Figure 6. AC measurement input/output waveform

Units

V

V

°C

°C

pF

ns

ns

V

V

VDDQ

VDDQIN

0V

VDDQ/2

VDDQIN/2

AI04153

1. VDD = VDDQ.

38/70

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