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M58MR032-ZCT データシートの表示(PDF) - STMicroelectronics

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M58MR032-ZCT Datasheet PDF : 52 Pages
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M58MR032C, M58MR032D
BLOCK PROTECTION
The M58MR032C/M58MR032D provide a flexible
protection of all the memory providing the protec-
tion, un-protection and locking of any blocks. All
blocks are protected at power-up. Each block of
the array has two levels of protection against pro-
gramming or erasing operation. The first level is
set by the Block Protect instruction; a protected
block cannot be programmed or erased until a
Block Unprotect instruction is given for that block.
A second level of protection is set by the Block
Lock instruction, and requires the use of the WP
pin, according to the following scheme:
– when WP is at VIH, the Lock status is overridden
and all blocks can be protected or unprotected;
– when WP is at VIL, Lock status is enabled; the
locked blocks are protected, regardless of their
previous protect state, and protection status
cannot be changed. Blocks that are not locked
can still change their protection status;
– the lock status is cleared for all blocks at power
up.
The protection and lock status can be monitored
for each block using the Read Electronic Signature
(RSIG) instruction. Protected blocks will output a
'1' on DQ0 and locked blocks will output a '1' in
DQ1 (see Table 13).
PROTECTION REGISTER PROGRAM (PRP)
and LOCK PROTECTION REGISTER
PROGRAM (LPRP)
The M58MR032C/M58MR032D features a 128-bit
protection register and a security Block in order to
increase the protection of a system design. The
Protection Register is divided in two 64-bit seg-
ments. The first segment (81h to 84h) is a unique
device number, while the second one (85h to 88h)
can be programmed by the user. When shipped
the user programmable segment is read at '1'. It
can be only programmed at '0'.
The user programmable segment can be protect-
ed writing the bit 1 of the Protection Lock register
(80h). The bit 1 protects also the bit 2 of the Pro-
tection Lock Register.
The M58MR032C/M58MR032D feature a security
Block. The security Block is located at 1FF000-
1FFFFF (M58MR032C) or at 000000-000FFF
(M58MR032D) of the device. This block can be
permanently protected by the user programming
the bit 2 of the Protection Lock Register (see Fig-
ure 5).
The protection Register and the Protection Lock
Register can be read using the RSIG and RCFI in-
structions. A subsequent read in the address start-
ing from 80h to 88h, the user will retrieve
respectively the Protection Lock register, the
unique device number segment and the OTP user
programmable register segment (see Table 23).
18/52
WRITE READ CONFIGURATION REGISTER
(CR).
This instruction uses two Coded Cycles, the first
write cycle is the write Read Configuration Regis-
ter set-up 60h, the second write cycle is write
Read Configuration Register confirm 03h both to
Read Configuration Register address (see Table
11).
This instruction writes the contents of address bits
ADQ15-ADQ0 to bits CR15-CR0 of the Read Con-
figuration Register (A20-A16 are don't care). At
Power-up the Read Configuration Register is set
to asynchronous Read mode, Power-down dis-
abled and bus invert (power save function) dis-
abled. A description of the effects of each
configuration bit is given in Table 14.
Read mode (CR15). The device supports an
asynchronous page mode and a synchronous
burst mode. In asynchronous page mode, the de-
fault at power-up, data is internally read and stored
in a buffer of 4 words selected by ADQ0 and ADQ1
address inputs. In synchronous burst mode, the
device latches the starting address and then out-
puts a sequence of data that depends on the Read
Configuration Register settings (see Figures 10,
11 and 12).
Synchronous burst mode is supported in both pa-
rameter and main blocks; it is also possible to per-
form burst mode read across the banks.
Bus Invert configuration (CR14). This register
bit is used to enable the BINV pin functionality.
BINV functionality depends upon configuration
bits CR14 and CR15 (see Table 14 for configura-
tion bits definition) as shown in Table 15. As output
pin BINV is active only when enabled (CR14 = 1)
in Read Array burst mode (CR15 = 0). As input pin
BINV is active only when enabled (CR14 = 1).
BINV is ignored when ADQ0-ADQ15 lines are
used as address inputs (addresses must not be in-
verted).
X-Latency (CR13-CR11). These configuration
bits define the number of clock cycles elapsing
from L going low to valid data available in burst
mode (see Figure 6). The correspondence be-
tween X-Latency settings and the maximum sus-
tainable frequency must be calculated taking into
account some system parameters.
Two conditions must be satisfied:
– (n + 2) tK tACC + tQVK_CPU + tAVK_CPU
– tK > tKQV + tQVK_CPU
where "n" is the chosen X-Latency configuration
code, tK is the clock period, tAVK_CPU is the ad-
dress setup time guaranteed by the system CPU,
and tQVK_CPU is the data setup time required by
the system CPU.

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