M58MR032-ZCT データシートの表示（PDF） - STMicroelectronics

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M58MR032-ZCT

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58MR032C, M58MR032D

Table 19. CFI Query System Interface Information

Offset

Data

Description

VDD Logic Supply Minimum Program/Erase or Write voltage

1Bh

0017h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

VDD Logic Supply Maximum Program/Erase or Write voltage

1Ch

0020h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

VPP [Programming] Supply Minimum Program/Erase voltage

1Dh

0017h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 millivolts

VPP [Programming] Supply Maximum Program/Erase voltage

1Eh

00C0h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 millivolts

1Fh

0004h Typical timeout per single byte/word program = 2n µs

20h

0004h Typical timeout for tetra word program = 2n µs

21h

000Ah Typical timeout per individual block erase = 2n ms

22h

0000h Typical timeout for full chip erase = 2n ms

23h

0004h Maximum timeout for word program = 2n times typical

24h

0004h Maximum timeout for tetra word = 2n times typical

25h

0004h Maximum timeout per individual block erase = 2n times typical

26h

0000h Maximum timeout for chip erase = 2n times typical

Value

1.7V

2V

1.7V

12V

16µs

16µs

1s

NA

512µs

512µs

16s

NA

25/52

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