NCV8570(2009) データシートの表示（PDF） - ON Semiconductor

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NCV8570
(Rev.:2009)

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

ON Semiconductor 

VCE

1 V/div

Vout

1 V/div

NCV8570

TYPICAL CHARACTERISTICS

Vin

500 mV/div

3.6 V

TA = 25°C

Vin = 4 V

Iout = 150 mA

Cnoise = 0 nF

Vout

10 mV/div

4.2 V

TA = 25°C

Vout = 1.8 V

Iout = 150 mA

Cout = 1 mF

TIME (20 ms/div)

Figure 20. Enable Voltage and Output Voltage

vs. Time (Start−Up)

10

TA = 25°C

Iout

100 mA/div

1

TIME (100 ms/div)

Figure 21. Line Transient

Unstable Region

Vout = 3.0 V

Vout = 1.8 V

Vout

50 mV/div

Vin = 2.8 V

Vout = 1.8 V

Cout = 1 mF

TIME (40 ms/div)

Figure 22. Load Transient

Stable Region

0.1

Cout = 1 mF to 10 mF

0.01

0

25

50

75

100

125 150

Iout, OUTPUT CURRENT (mA)

Figure 23. Output Capacitor ESR vs. Output

Current

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