28F008SA データシートの表示（PDF） - Intel
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28F008SA Datasheet PDF : 33 Pages
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28F008SA
Bus
Operation
Write
Command
Erase
Suspend
Comments
Data e B0H
Write
Read
Data e 70H
Status Register
Standby
Read
Standby
Check RY BY
VOH e Ready VOL e
Busy or Read Status
Register
Check SR 7
1 e Ready 0 e Busy
Toggle OE or CE to
Update Status Register
Check SR 6
1 e Suspended
Write
Read Array Data e FFH
Read
Write
Read array data from block
other than that being
erased
Erase Resume Data e D0H
290429 – 10
Figure 9 Erase Suspend Resume Flowchart
Power Supply Decoupling
Flash memory power switching characteristics re-
quire careful device decoupling System designers
are interested in 3 supply current issues standby
current levels (ISB) active current levels (ICC) and
transient peaks produced by falling and rising edges
of CE Transient current magnitudes depend on
the device outputs’ capacitive and inductive loading
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks
Each device should have a 0 1 mF ceramic capacitor
connected between each VCC and GND and be-
tween its VPP and GND These high frequency low
inherent-inductance capacitors should be placed as
close as possible to package leads Additionally for
every 8 devices a 4 7 mF electrolytic capacitor
should be placed at the array’s power supply con-
nection between VCC and GND The bulk capacitor
will overcome voltage slumps caused by PC board
trace inductances
VPP Trace on Printed Circuit Boards
Writing flash memories while they reside in the tar-
get system requires that the printed circuit board
designer pay attention to the VPP power supply
trace The VPP pin supplies the memory cell current
for writing and erasing Use similar trace widths and
layout considerations given to the VCC power bus
Adequate VPP supply traces and decoupling will de-
crease VPP voltage spikes and overshoots
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