RF3145 データシートの表示（PDF） - RF Micro Devices

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RF3145

QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

RF Micro Devices 

RF3145

Absolute Maximum Ratings

Parameter

Supply Voltage

Power Control Voltage (VRAMP)

Band Select

TX Enable

RF - Input Power

Max Duty Cycle

Output Load VSWR

Operating Case Temperature

Storage Temperature

Rating

-0.3 to +6.0

-0.3 to +1.8

3.0

3.0

12.0

50

10:1

-30 to +90

-55 to +150

Unit

V

V

V

V

dBm

%

°C

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Parameter

GSM US 850MHz Band

Operating Frequency Range

Maximum Output Power

Total Efficiency (PAE)

Input Power for Max Output

Folding Conversion Gain

Specification

Min.

Typ.

Max.

824

849

+34.5

+35.4

+32.5

0

45

51

35

+2

+4

+6

-5

Output Noise Power

Forward Isolation

Second Harmonic

Third Harmonic

All other Non-Harmonic Spurious

Cross Band Coupling 2F0

Input Impedance

Input VSWR

Output Load VSWR

Output Load Ruggedness

Output Load Impedance

Note: VRAMP,MAX=3/8*VBATT+0.18<1.6V

-86

-30

50

6:1

10:1

50

-84

-25

-5

-7

-36

-20

2.5:1

Unit

MHz

dBm

dBm

dBm

%

%

dBm

dB

dBm

dBm

dBm

dBm

dBm

dBm

Ω

Ω

Condition

Temp=+25 °C, VCC=3.5V, BandSel=Low,

VMODE=Low, VRAMP=VRAMP,MAX, PIN=+4dBm

Freq=824MHz to 849MHz, 25% Duty Cycle,

Pulse Width=1154μs, TX EN=High

Temp = 25°C, VCC=3.5V,

VRAMP= VRAMP,MAX

Temp=+85oC, VBATT=3.0V, VRAMP=VRAMP,MAX

VRAMP = 0.2 V

At POUT,MAX, VCC=3.5V

At POUT=31.5dBm

F0=849MHz, other signal 829MHz at -

40dBm, measured at 869MHz in 100kHz

RBW (Max Power)

RBW=100kHz, 869MHz to 894MHz,

POUT > +5 dBm

TX_ENABLE=0V, VRAMP=0.2, PIN=+6dBm

Over all power levels

Over all power levels

Measured at DCS/PCS port. Over all power lev-

els.

Over all power levels

Spurious<-36dBm, VRAMP =0.2V to 1.6V,

RBW = 3 MHz

Load impedance presented at RF OUT pad

2 of 18

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A4 DS050919

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