IRFP21N60L(2011) データシートの表示（PDF） - Vishay Semiconductors

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IRFP21N60L
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

100µsec

1msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

0.1

1

10

100

1000

10000

VDS, Drain-to-Source Voltage (V)

Fig. 9 - Maximum Safe Operating Area

25

20

15

10

5

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 11a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 11b - Switching Time Waveforms

0

25

50

75

100 125 150

TC , Case Temperature (°C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

1

D = 0.50

0.1

0.20

0.10

0.05

0.01

0.02

0.01

P DM

0.001

0.0001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

t1

t2

Notes:

1. Duty factor D =

t1/ t 2

2. Peak T J = P DM x Z thJC + T C

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91206

S11-0446-Rev. C, 14-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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