SUB75N08-10 データシートの表示（PDF） - Vishay Semiconductors
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SUB75N08-10 Datasheet PDF : 4 Pages
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SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 30 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.5
0
–50 –25
0 25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
80
60
40
20
1
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
500
Safe Operating Area
Limited
100
by rDS(on)
10
1
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10–5
Single Pulse
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
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