T431616B データシートの表示（PDF） - Taiwan Memory Technology

部品番号

コンポーネント説明

メーカー

T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616B

Page Write cycle at Different Bank @ Burst Length = 4

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19

CLOCK

CKE

HIGH

CS

RAS

CAS

ADDR

RAa

CAa RBb

CBb

CAc

CBd

*Note2

BA

A10/AP

RAa

RBb

DQ

WE

DQM

DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 DBd1

t CDL

t RDL

*Note1

Row Active

(A-Bank)

Row Active

(B-Bank)

Write (A-

Bank)

Write (B-

Bank)

Write (A-

Bank)

Write (B-

Bank)

Precharge

(A-Bank)

:Don't care

*Note : 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid input data.

2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same.

Taiwan Memory Technology, Inc. reserves the right P.20

to change products or specifications without notice.

Publication Date: JUL. 2001

Revision:A

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