TGA4522 データシートの表示（PDF） - TriQuint Semiconductor

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TGA4522

33 – 47 GHz Wide Band Driver Amplifier

TriQuint Semiconductor 

TGA4522

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Vg

Id

⏐Ig⏐

PIN

PD

TCH

TSTG

Drain Voltage

Gate Voltage Range

Drain Current

Gate Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

8V

2/

-2 TO 0 V

700 mA

2/ 3/

16 mA

3/

23 dBm

4.2 W

2/

200 °C

5/ 6/

320 °C

-65 to 150 °C

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ Total current for the entire MMIC.

4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 °C, the

median life is 7.3E+3 hrs.

5/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

6/ These ratings apply to each individual FET.

2

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