TPC8115 データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
メーカー
TPC8115 Datasheet PDF : 7 Pages
| |||
TPC8115
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8115
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 40 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−20
V
−20
V
±8
V
−10
A
−40
1.9
W
1.0
W
26
mJ
−10
A
0.19
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-03-16
Share Link: 