BAS21 データシートの表示（PDF） - Fairchild Semiconductor

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BAS21

General Purpose High Voltage Diode

Fairchild Semiconductor 

BAS21

3

SOT-23

2

1

3

29

1

2

CONNECTION DIAGRAM

3

1

2 NC

General Purpose High Voltage Diode

Sourced from Process 1H. See MMBD1401 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

W IV

IO

IF

if

if(surge)

Tstg

TJ

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

250

200

600

700

1.0

2.0

-55 to +150

150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

Max

BAS21

350

2.8

357

Units

V

mA

mA

mA

A

A

°C

°C

Units

mW

mW /°C

°C/W

ã 1998 Fairchild Semiconductor Corporation

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