FB180SA10 データシートの表示（PDF） - International Rectifier
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FB180SA10 Datasheet PDF : 8 Pages
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FB180SA10
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ls
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.0065 W VGS = 10V, ID = 108A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
93 ––– ––– S VDS = 25V, ID = 108A
––– ––– 50
––– ––– 500
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 250 380
ID = 180A
––– 40 60 nC VDS = 80V
––– 110 165
VGS = 10.0V, See Fig. 6 and 13
––– 45 –––
VDD = 50V
––– 351 ––– ns ID = 180A
––– 181 –––
RG = 2.0W (Internal)
––– 335 –––
RD = 0.27W, See Fig. 10
––– 5.0 ––– nH Between lead,
and center of die contact
––– 10700 –––
VGS = 0V
––– 2800 ––– pF VDS = 25V
––– 1300 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 180 A showing the
integral reverse
––– ––– 720
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V
––– 300 450
––– 2.6 3.9
ns TJ = 25°C, IF = 180A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =43µH
RG = 25W , IAS = 180A. (See Figure 12)
ISD £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
2
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