MX29F200B データシートの表示（PDF） - Macronix International

部品番号

コンポーネント説明

メーカー

MX29F200B

2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

Macronix International 

MX29F200T/B

ERASE RESUME

This command will cause the command register to clear

the suspend state and return back to Sector Erase mode

but only if an Erase Suspend command was previously

issued. Erase Resume will not have any effect in all

other conditions.Another Erase Suspend command can

be written after the chip has resumed erasing.

SET-UP AUTOMATIC PROGRAM

COMMANDS

To initiate Automatic Program mode, A three-cycle

command sequence is required. There are two "unlock"

write cycles. These are followed by writing the Automatic

Program command A0H.

Once the Automatic Program command is initiated, the

next WE pulse causes a transition to an active

programming operation. Addresses are latched on the

falling edge, and data are internally latched on the rising

edge of the WE pulse. The rising edge of WE also begins

the programming operation. The system does not

require to provide further controls or timings. The device

will automatically provide an adequate internally

generated program pulse and verify margin.

If the program opetation was unsuccessful, the data on

Q5 is "1"(see Table 4), indicating the program operation

exceed internal timing limit. The automatic programming

operation is completed when the data read on Q6 stops

toggling for two consecutive read cycles and the data on

Q7 and Q6 are equivalent to data written to these two

bits, at which time the device returns to the Read

mode(no program verify command is required).

WRITE OPERATION STATUS DATA

POLLING-Q7

The MX29F200T/B also features Data Polling as a

method to indicate to the host system that the Automatic

Program or Erase algorithms are either in progress or

completed.

While the Automatic Programming algorithm is in

operation, an attempt to read the device will produce the

complement data of the data last written to Q7. Upon

completion of the Automatic Program Algorithm an

attempt to read the device will produce the true data last

written to Q7. The Data Polling feature is valid after the

rising edge of the fourth WE pulse of the four write pulse

sequences for automatic program.

While the Automatic Erase algorithm is in operation, Q7

will read "0" until the erase operation is competed. Upon

completion of the erase operation, the data on Q7 will

read "1". The Data Polling feature is valid after the rising

edge of the sixth WE pulse of six write pulse sequences

for automatic chip/sector erase.

The Data Polling feature is active during Automatic

Program/Erase algorithm or sector erase time-out.(see

section Q3 Sector Erase Timer)

RY/BY:Ready/Busy

The RY/BY is a dedicated, open-drain output pin that

indicates whether an Automatic Erase/Program algorithm

is in progress or complete. The RY/BY status is valid

after the rising edge of the final WE pulse in the command

sequence. Since RY/BY is an open-drain output, several

RY/BY pins can be tied together in parallel with a pull-up

resistor to Vcc.

If the outputs is low (Busy), the device is actively erasing

or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready), the

device is ready to read array data (including during the

Erase Suspend mode), or is in the standby mode.

P/N:PM0549

REV. 1.3 , DEC. 24, 2001

11

Share Link: