PHD78NQ03LT データシートの表示（PDF） - NXP Semiconductors.

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PHD78NQ03LT

N-channel enhancement mode field-effect transistor

NXP Semiconductors. 

NXP Semiconductors

PHD78NQ03LT

N-channel TrenchMOS logic level FET

103

ID

(A)

102

Limit RDSon = VDS / ID

DC

10

1

1

10

tp = 10 µs

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100 μs

1 ms

10 ms

102

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance from see Figure 4

junction to mounting

base

thermal resistance from minimum footprint;

junction to ambient

SOT404 minimum footprint;

[1] Mounted on a printed-circuit board; vertical in still air.

Min Typ Max Unit

-

-

1.4 K/W

[1] -

75

-

K/W

[1] -

50

-

K/W

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10

Zth(j-mb)

(K/W)

1

δ =0.5

0.2

0.1

10-1 0.05

0.02

P

δ = tp

T

single pulse

tp

t

10-2

10-5

10-4

10-3

10-2

T

10-1

1

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PHD78NQ03LT_6

Product data sheet

Rev. 06 — 11 June 2009

© NXP B.V. 2009. All rights reserved.

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