PHD78NQ03LT データシートの表示（PDF） - NXP Semiconductors.

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PHD78NQ03LT

N-channel enhancement mode field-effect transistor

NXP Semiconductors. 

NXP Semiconductors

PHD78NQ03LT

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS

VGS(th)

drain-source

breakdown voltage

gate-source threshold

voltage

ID = 250 µA; VGS = 0 V; Tj = -55 °C

ID = 250 µA; VGS = 0 V; Tj = 25 °C

ID = 1 mA; VDS = VGS; Tj = -55 °C;

see Figure 7; see Figure 8

ID = 1 mA; VDS = VGS; Tj = 175 °C;

see Figure 7; see Figure 8

ID = 1 mA; VDS = VGS; Tj = 25 °C;

see Figure 7; see Figure 8

IDSS

IGSS

RDSon

drain leakage current

gate leakage current

drain-source on-state

resistance

VDS = 25 V; VGS = 0 V; Tj = 25 °C

VDS = 25 V; VGS = 0 V; Tj = 175 °C

VGS = 15 V; VDS = 0 V; Tj = 25 °C

VGS = -15 V; VDS = 0 V; Tj = 25 °C

VGS = 10 V; ID = 25 A; Tj = 25 °C;

see Figure 9; see Figure 10

VGS = 5 V; ID = 25 A; Tj = 175 °C;

see Figure 9; see Figure 10

VGS = 5 V; ID = 25 A; Tj = 25 °C;

see Figure 9; see Figure 10

RG

internal gate resistance f = 1 MHz; Tj = 25 °C

(AC)

Dynamic characteristics

QG(tot)

QGS

QGS1

total gate charge

gate-source charge

pre-threshold

gate-source charge

ID = 0 A; VDS = 0 V; VGS = 4.5 V;

Tj = 25 °C

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

Tj = 25 °C; see Figure 11; see Figure 12

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

Tj = 25 °C; see Figure 12; see Figure 12

QGS2

post-threshold

gate-source charge

QGD

VGS(pl)

gate-drain charge

gate-source plateau

voltage

ID = 25 A; VDS = 12 V; Tj = 25 °C;

see Figure 11; see Figure 12

Ciss

input capacitance

VDS = 12 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; see Figure 13

VDS = 0 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C

Coss

output capacitance

VDS = 12 V; VGS = 0 V; f = 1 MHz;

Crss

reverse transfer

Tj = 25 °C; see Figure 13

capacitance

Min Typ Max Unit

22

-

25

-

-

-

-

V

-

V

2.2 V

0.5 -

-

V

1

1.5 2

V

-

-

1

µA

-

-

500 µA

-

10

100 nA

-

10

100 nA

-

7.65 9

mΩ

-

18.9 24.3 mΩ

-

10.5 13.5 mΩ

-

1

-

Ω

-

8.6 -

nC

-

11

-

nC

-

3.6 -

nC

-

1.8 -

nC

-

1.8 -

nC

-

4

-

nC

-

3

-

V

-

970 -

pF

-

1460 -

pF

-

415 -

pF

-

170 -

pF

PHD78NQ03LT_6

Product data sheet

Rev. 06 — 11 June 2009

© NXP B.V. 2009. All rights reserved.

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