PHD78NQ03LT データシートの表示（PDF） - NXP Semiconductors.

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PHD78NQ03LT

N-channel enhancement mode field-effect transistor

NXP Semiconductors. 

NXP Semiconductors

PHD78NQ03LT

N-channel TrenchMOS logic level FET

10

VGS

(V)

8

ID = 25 A

Tj = 25 °C

6

12 V

4

2

0

0

10

003aaa763

VDD = 19 V

20

30

QG (nC)

Fig 11. Gate-source voltage as a function of gate

charge; typical values

104

003aaa765

C

(pF)

VDS

ID

VGS(pl)

VGS(th)

VGS

QGS1 QGS2

QGS

QGD

QG(tot)

003aaa508

Fig 12. Gate charge waveform definitions

80

IS

(A)

60

003aaa764

103

Ciss

40

102

10-1

1

Coss

Crss

10

102

VDS (V)

20

0

0

175 °C

Tj = 25 °C

0.4

0.8

1.2

VSD (V)

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 14. Source current as a function of source-drain

voltage; typical values

PHD78NQ03LT_6

Product data sheet

Rev. 06 — 11 June 2009

© NXP B.V. 2009. All rights reserved.

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