T431616A データシートの表示（PDF） - Taiwan Memory Technology

部品番号

コンポーネント説明

メーカー

T431616A

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616A

*note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.

2. Bank active & read/write are controlled by BA.

BA

Active & Read/Write

0

Bank A

1

Bnak B

3. Enable and disable auto precharge function are controlled by A10/AP in read/wirte command.

A10/AP

0

1

BA

Operation

0 Disable auto precharge,leave bank A active at end of burst.

1 Disable auto precharge,leave bank B active at end of burst.

0 Enable auto precharge, precharge bank A at end of burst.

1 Enable auto precharge, precharge bank B at end of burst.

4. A10/AP and BA control bank precharge when precharge command is asserted.

A10/AP BA

0

0

0

1

1

X

precharge

Bank A

Bank B

Both Banks

Taiwan Memory Technology, Inc. reserves the right P.15

to change products or specifications without notice.

Publication Date: DEC. 2000

Revision: C

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